IDiyas

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9539645 B1

PDFFull Text
Date of Patent:
Jan. 10, 2017

Filed:

Mar. 30, 2012

Cutting tool

Applicant:

Takashi Watanabe, Satsumasendai, JP;

Inventor:

Takashi Watanabe, Satsumasendai, JP;

Assignee:

Kyocera Corporation, Kyoto-shi, Kyoto, JP;

Attorney:
Primary Examiner:

Prashant J Khatri

Int. Cl.
CPC ...
B23B 27/14 (2006.01); C04B 35/587 (2006.01); C04B 35/626 (2006.01); C04B 35/645 (2006.01); C04B 41/52 (2006.01); C04B 41/89 (2006.01); C04B 41/00 (2006.01); C23C 16/34 (2006.01); C23C 16/40 (2006.01); C23C 28/04 (2006.01); C23C 28/00 (2006.01); C23C 16/32 (2006.01); C23C 16/36 (2006.01); C04B 111/00 (2006.01);
U.S. Cl.
CPC ...
B23B 27/14 (2013.01); C04B 35/587 (2013.01); C04B 35/62695 (2013.01); C04B 35/6455 (2013.01); C04B 41/009 (2013.01); C04B 41/52 (2013.01); C04B 41/89 (2013.01); C23C 16/32 (2013.01); C23C 16/34 (2013.01); C23C 16/36 (2013.01); C23C 16/403 (2013.01); C23C 28/042 (2013.01); C23C 28/044 (2013.01); C23C 28/42 (2013.01); C04B 2111/0025 (2013.01); C04B 2235/3206 (2013.01); C04B 2235/3217 (2013.01); C04B 2235/3227 (2013.01); C04B 2235/428 (2013.01); C04B 2235/5436 (2013.01); C04B 2235/5445 (2013.01); C04B 2235/6562 (2013.01); C04B 2235/661 (2013.01); Y10T 428/24942 (2015.01); Y10T 428/24975 (2015.01);
Abstract

A cutting tool including a substrate composed of a silicon nitride-based sintered body and a coating layer. The coating layer includes first, second, third and fourth layers. The first layer is located on the surface of the substrate and is composed of TiN having an average crystalline width of 0.1 to 0.4 μm. The second layer is located on the first layer and composed of AlOhaving an average crystalline width of 0.01 to 1.5 μm. The third layer is located on the second layer and is composed of TiN having an average crystalline width of 0.01 to 0.1 μm which is smaller than that of the first layer. The fourth layer is located on the third layer and is composed of AlOhaving an average crystalline width of 0.01 to 1.5 μm.

Find Patent Forward Citations

Loading…