The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 03, 2017

Filed:

Sep. 28, 2015
Applicants:

Jonathan E Spanier, Bala Cynwyd, PA (US);

Stephen S Nonnenmann, Philadelphia, PA (US);

Oren David Leaffer, Philadelphia, PA (US);

Inventors:

Jonathan E Spanier, Bala Cynwyd, PA (US);

Stephen S Nonnenmann, Philadelphia, PA (US);

Oren David Leaffer, Philadelphia, PA (US);

Assignee:

Drexel University, Philadelphia, PA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H05K 5/00 (2006.01); B82Y 10/00 (2011.01); H01G 4/008 (2006.01); H01G 4/12 (2006.01); H01G 4/33 (2006.01); H01L 29/06 (2006.01); H01L 27/02 (2006.01); H01L 49/02 (2006.01); H01L 29/775 (2006.01); H01L 43/02 (2006.01); H01L 29/78 (2006.01); H01G 4/005 (2006.01); H01L 21/28 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H05K 5/0091 (2013.01); B82Y 10/00 (2013.01); H01G 4/005 (2013.01); H01G 4/008 (2013.01); H01G 4/1209 (2013.01); H01G 4/33 (2013.01); H01L 27/0214 (2013.01); H01L 28/40 (2013.01); H01L 29/068 (2013.01); H01L 29/0665 (2013.01); H01L 29/0673 (2013.01); H01L 29/66977 (2013.01); H01L 29/775 (2013.01); H01L 29/78391 (2014.09); H01L 43/02 (2013.01); H01L 21/28291 (2013.01); H01L 29/6684 (2013.01);
Abstract

Disclosed herein are nanoscale devices comprising one or more ferroelectric nanoshells characterized as having an extreme curvature in at least one spatial dimension. Also disclosed are ferroelectric field effect transistors and metal ferroelectric metal capacitors comprising one or more ferroelectric nanoshells. Methods for controlling spontaneous ferroelectric polarization in nanoshell devices are also disclosed.


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