The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 03, 2017
Filed:
Oct. 17, 2014
Applicant:
Teledyne Scientific & Imaging, Llc., Thousand Oaks, CA (US);
Inventor:
Zachary M. Griffith, Thousand Oaks, CA (US);
Assignee:
TELEDYNE SCIENTIFIC & IMAGING, LLC., Thousand Oaks, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03F 3/68 (2006.01); H03F 1/56 (2006.01); H03F 3/21 (2006.01); H03F 1/02 (2006.01); H03F 3/193 (2006.01); H03F 3/195 (2006.01); H03F 3/60 (2006.01);
U.S. Cl.
CPC ...
H03F 1/56 (2013.01); H03F 1/0283 (2013.01); H03F 3/193 (2013.01); H03F 3/195 (2013.01); H03F 3/211 (2013.01); H03F 3/604 (2013.01); H03F 2200/318 (2013.01); H03F 2200/451 (2013.01); H03F 2203/21106 (2013.01); H03F 2203/21142 (2013.01);
Abstract
An amplifier cell apparatus has an RF input node, a first power transistor in communication with the input node through a first input impedance matching network, a second power transistor in communication with the input node through a second input impedance matching network, and an RF output node in communication with the first and second power transistors through a single output impedance matching network so that the first and second input impedance matching networks are disposed on an RF input side of the amplifier cell.