The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 03, 2017
Filed:
Dec. 20, 2013
Applicant:
Renesas Electronics Corporation, Kawasaki-shi, JP;
Inventors:
Makoto Tanaka, Tokyo, JP;
Akihiro Nakahara, Kawasaki, JP;
Assignee:
RENESAS ELECTRONICS CORPORATION, Kawasaki-Shi, Kanagawa, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G05F 1/00 (2006.01); H02H 9/02 (2006.01); H03K 17/082 (2006.01);
U.S. Cl.
CPC ...
H02H 9/025 (2013.01); H03K 17/0822 (2013.01);
Abstract
A semiconductor device includes: an output transistor; and a current detection section. The output transistor controls electric power supply from an electric power source to a load. The current detection section detects a current flowing through the output transistor. The current detection section has a current detection characteristic in which a current detection value has approximately linier and negative dependence on a drain-source voltage of the output transistor.