The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 03, 2017
Filed:
Jan. 27, 2015
Applicant:
The Regents of the University of California, Oakland, CA (US);
Inventors:
Pedram Khalili Amiri, Los Angeles, CA (US);
Zhongming Zeng, Suzhou, CN;
Kang L. Wang, Santa Monica, CA (US);
Assignee:
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA, Oakland, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 43/08 (2006.01); G01R 33/09 (2006.01); H01L 43/10 (2006.01);
U.S. Cl.
CPC ...
H01L 43/08 (2013.01); G01R 33/098 (2013.01); H01L 43/10 (2013.01);
Abstract
A nanoscale tunnel magneto-resistance (TMR) sensor comprising an in-plane-magnetized reference layer and a free layer comprising interfacial perpendicular anisotropy, wherein the free layer comprises a sensing layer for sensing resistance as a function of applied magnetic field and is tunable to vary the direction of the sensing layer magnetization to be in-plane, canted, or out-of-plane.