The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 03, 2017
Filed:
Jul. 30, 2014
Method of manufacturing semiconductor light emitting device, and semiconductor light emitting device
Dowa Electronics Materials Co., Ltd., Tokyo, JP;
Yoshitaka Kadowaki, Tokyo, JP;
DOWA ELECTRONICS MATERIALS CO., LTD., Tokyo, JP;
Abstract
When an uneven pattern is formed on a light extraction surface composed of a semiconductor crystal by wet-etching using an alkaline solution, a plurality of convex portions cannot be formed in a desired arrangement. A method of manufacturing a semiconductor light emitting device includes a light extraction surface composed of a semiconductor crystal, wherein when the uneven pattern is formed by a plurality of convex portions on the light extraction surface, first, a plurality of impressions are formed on the light extraction surface of a semiconductor layer composed of a semiconductor crystal using a processing substrate, and next, by applying wet-etching to the light extraction surface using an alkaline solution, to thereby form convex portions with a portion where each impression is formed as a top portion, and a plurality of facets of the semiconductor crystal as a side face thereof.