The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 03, 2017
Filed:
Sep. 28, 2012
Bbsa Limited, Wanchai, Hong Kong, CN;
Dowa Electronics Materials Co., Ltd., Tokyo, JP;
Meoung Whan Cho, Yongin, KR;
Seog Woo Lee, Yongin, KR;
Ryuichi Toba, Akita, JP;
Yoshitaka Kadowaki, Akita, JP;
BBSA LIMITED, Hong Kong, CN;
DOWA ELECTRONICS MATERIALS CO., LTD., Tokyo, JP;
Abstract
Provided is a high quality III nitride semiconductor device in which, not only X-shaped cracks extending from the vicinity of the corners of semiconductor structures to the center portion thereof, but also crack spots at the center portion can be prevented from being formed and can provide a method of efficiently manufacturing the III nitride semiconductor device. The III nitride semiconductor device of the present invention includes a support and two semiconductor structures having a nearly quadrangular transverse cross-sectional shape that are provided on the support. The two semiconductor structures are situated such that one side surface of one of the two semiconductor structures is placed to face one side surface of the other of them. The support covers the other three side surfaces and of the four sides of the semiconductor structures.