The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 03, 2017
Filed:
Jul. 10, 2015
Applicant:
Seoul Viosys Co., Ltd., Ansan-si, KR;
Inventors:
Jeong Hun Heo, Ansan-si, KR;
Yeo Jin Yoon, Ansan-si, KR;
Joo Won Choi, Ansan-si, KR;
Joon Hee Lee, Ansan-si, KR;
Chang Yeon Kim, Ansan-si, KR;
Su Young Lee, Ansan-si, KR;
Assignee:
Seoul Viosys Co., Ltd., Ansan-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/20 (2006.01); H01L 33/00 (2010.01); H01L 27/15 (2006.01); H01L 33/62 (2010.01);
U.S. Cl.
CPC ...
H01L 33/0075 (2013.01); H01L 27/156 (2013.01); H01L 33/62 (2013.01); H01L 2924/0002 (2013.01); H01L 2933/0033 (2013.01); H01L 2933/0066 (2013.01);
Abstract
A method of fabricating a semiconductor device includes forming an insulation pattern including a mask region and an open region on a gallium nitride substrate, growing gallium nitride semiconductor layers to cover the insulation pattern, and patterning the semiconductor layers to form a plurality of semiconductor stacks separated from each other, the plurality of semiconductor stacks being electrically isolated from the gallium nitride substrate by the insulation pattern.