The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 03, 2017
Filed:
May. 14, 2015
Shanghai Shenzhou New Energy Development Co., Ltd., Shanghai, CN;
Fei Zheng, Shanghai, CN;
Zhongwei Zhang, Shanghai, CN;
Lei Shi, Shanghai, CN;
Zhongli Ruan, Shanghai, CN;
Chen Zhao, Shanghai, CN;
Yuxue Zhao, Shanghai, CN;
Shanghai Shenzhou New Energy Development Co., Ltd., Shanghai, CN;
Abstract
A wet etching method for an N-type bifacial cell including: (1) providing an N-type silicon wafer, proceeding with surface structuralization on the N-type silicon wafer, and producing a PN junction on a surface of the N-type silicon wafer by using a boron diffusion technique; (2) proceeding with a first mixed acid washing, etching the PN junction on an edge and a back surface of the N-type silicon wafer; (3) proceeding with a first pure water washing and a first alkaline washing, removing residual acid solution from the surface of the N-type silicon wafer; (4) proceeding with a second pure water washing and a second mixed acid washing, removing residual impurities from the surface of the N-type silicon wafer; (5) proceeding with a third pure water washing and air drying; and (6) after air drying, completing etching on the N-type bifacial cell.