The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 03, 2017

Filed:

Dec. 24, 2014
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Beom Seok Kim, Seoul, KR;

Bongjin Kuh, Suwon-si, KR;

Jongsung Lim, Seoul, KR;

Hanmei Choi, Seoul, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD, Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 31/0352 (2006.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
H01L 31/03529 (2013.01); H01L 31/1804 (2013.01); H01L 31/1864 (2013.01); Y02P 70/521 (2015.11);
Abstract

A semiconductor device includes a first semiconductor layer including a recess region and protrusions defined by the recessed region, first insulating patterns provided on the protrusions and extending to sidewalls of the protrusions, and a second semiconductor layer to fill the recess region and cover the first insulating patterns. The protrusions includes a first group of protrusions spaced apart from each other in a first direction to constitute a row and a second group of protrusions spaced from the first group of protrusions in a second direction intersecting the first direction and spaced from each other in the first direction to constitute a row. The second group of protrusions are shifted from the first group of protrusions in the first direction.


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