The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 03, 2017
Filed:
Jun. 19, 2014
Applicants:
Imec Vzw, Leuven, BE;
Katholieke Universiteit Leuven, Ku Leuven R&d, Leuven, BE;
Inventors:
Koen De Munck, Leuven, BE;
Tomislav Resetar, Leuven, BE;
Assignees:
IMEC VZW, Leuven, BE;
Katholieke Universiteit Leuven, KU Leuven R&D, Leuven, BE;
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0352 (2006.01); H01L 27/146 (2006.01); H01L 31/102 (2006.01);
U.S. Cl.
CPC ...
H01L 31/03529 (2013.01); H01L 27/1461 (2013.01); H01L 27/14643 (2013.01); H01L 31/102 (2013.01);
Abstract
Described herein is a pinned photodiode pixel architecture having a p-type substrate that is independently biased with respect to a pixel area to provide an avalanche region between an n-type region and a p-type region formed on the substrate. Such a pinned photodiode pixel can be used in imaging sensors that are used in low light level conditions.