The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 03, 2017

Filed:

May. 15, 2013
Applicant:

Epistar Corporation, Hsinchu, TW;

Inventors:

Ming-Nan Chang, Hsinchu, TW;

Cheng-Hong Chen, Hsinchu, TW;

Assignee:

EPISTAR CORPORATION, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0224 (2006.01); H01L 31/054 (2014.01);
U.S. Cl.
CPC ...
H01L 31/022433 (2013.01); H01L 31/054 (2014.12); Y02E 10/52 (2013.01);
Abstract

A concentrated photovoltaic cell comprises a semiconductor stack comprising an upper surface and a lower surface opposite to the upper surface, wherein the upper surface is operable to absorb a light which comprises a light intensity distribution on the upper surface; and an upper electrode formed on the upper surface of the semiconductor stack and comprising an electrode pattern approximately corresponding to the light intensity distribution, wherein the light intensity distribution comprises a high light-concentrated area having a first light intensity and a low light-concentrated area having a second light intensity, wherein the second light intensity is lower than the first light intensity.


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