The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9537006 B1

PDF
Full Text
Expired
Date of Patent:
Jan. 03, 2017

Filed:

Nov. 05, 2015
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventor:

Johannes von Kluge, Dresden, DE;

Assignee:

GLOBALFOUNDRIES Inc., Grand Cayman, KY;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 19/094 (2006.01); H01L 29/78 (2006.01); G05F 3/02 (2006.01); H01L 21/66 (2006.01); H01L 27/088 (2006.01); H01L 29/66 (2006.01); H03K 19/20 (2006.01); H01L 49/02 (2006.01); H01L 29/8605 (2006.01); H03K 19/017 (2006.01); H01L 27/092 (2006.01); G05F 3/26 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7842 (2013.01); G05F 3/02 (2013.01); G05F 3/262 (2013.01); H01L 22/30 (2013.01); H01L 27/088 (2013.01); H01L 27/092 (2013.01); H01L 28/20 (2013.01); H01L 29/6653 (2013.01); H01L 29/6656 (2013.01); H01L 29/6659 (2013.01); H01L 29/66477 (2013.01); H01L 29/78 (2013.01); H01L 29/7833 (2013.01); H01L 29/8605 (2013.01); H03K 19/017 (2013.01); H03K 19/20 (2013.01); H01L 21/823807 (2013.01); H01L 29/665 (2013.01);
Abstract

An integrated circuit includes a first transistor having a first source region, a first drain region, a first channel region, a first gate electrode, and a first layer of a first stress-creating material, the first stress-creating material providing a stress that is variable in response to a signal acting on the first stress-creating material, wherein the first layer of the first stress-creating material is arranged to provide a first variable stress in the first channel region of the first transistor, the first variable stress being variable in response to a first signal acting on the first stress-creating material. The integrated circuit also includes a second transistor having a second source region, a second drain region, a second channel region, and a second gate electrode.


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von Kluge, Johannes. (2017). Circuit element including a layer of a stress-creating material providing a variable stress (U.S. Patent No. 9537006). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9537006

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