The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 03, 2017

Filed:

May. 19, 2015
Applicants:

Sungil Park, Suwon-si, KR;

Munhyeon Kim, Seoul, KR;

Woonggi Kim, Hwaseong-si, KR;

Keunhwi Cho, Seoul, KR;

Hwichan Jun, Yongin-si, KR;

Dongwon Kim, Seongnam-si, KR;

Daewon Ha, Seoul, KR;

Inventors:

Sungil Park, Suwon-si, KR;

Munhyeon Kim, Seoul, KR;

Woonggi Kim, Hwaseong-si, KR;

Keunhwi Cho, Seoul, KR;

Hwichan Jun, Yongin-si, KR;

Dongwon Kim, Seongnam-si, KR;

Daewon Ha, Seoul, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/417 (2006.01); H01L 29/45 (2006.01); H01L 29/06 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/41775 (2013.01); H01L 29/0653 (2013.01); H01L 29/41791 (2013.01); H01L 29/456 (2013.01); H01L 29/66545 (2013.01); H01L 29/78 (2013.01); H01L 29/785 (2013.01);
Abstract

Semiconductor devices may include a gate pattern and a contact pattern disposed on an active region. The contact pattern may include a recessed portion near the gate pattern, and a rising portion away from the gate pattern. The gate pattern may include a gate insulating layer and a gate electrode disposed on the gate insulating layer. An upper surface of the recessed portion may be lower than an upper surface of the rising portion.


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