The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 03, 2017
Filed:
Oct. 28, 2015
Toyota Jidosha Kabushiki Kaisha, Toyota-shi, Aichi-ken, JP;
Yasuhiro Hirabayashi, Nagoya, JP;
Hiroshi Hosokawa, Toyota, JP;
Yoshifumi Yasuda, Nisshin, JP;
Akitaka Soeno, Toyota, JP;
Masaru Senoo, Okazaki, JP;
Satoru Machida, Nagakute, JP;
Yusuke Yamashita, Nagakute, JP;
TOYOTA JIDOSHA KABUSHIKI KAISHA, Toyota, JP;
Abstract
A semiconductor layer of a reverse conducting insulated gate bipolar transistor is provided with a drift region of a first conductive type, a body region of a second conductive type that is disposed above the drift region, and a barrier region of the first conductive type that is disposed in the body region and electrically connects to the emitter electrode via a pillar member which extends from the one of main surfaces of the semiconductor layer. The barrier region is not contact with a side surface of the insulated trench gate.