The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 03, 2017
Filed:
Apr. 22, 2014
Covalent Materials Corporation, Shinagawa-ku, JP;
Jun Komiyama, Hadano, JP;
Kenichi Eriguchi, Hadano, JP;
Akira Yoshida, Nakano-ku, JP;
Hiroshi Oishi, Hadano, JP;
Yoshihisa Abe, Hadano, JP;
Shunichi Suzuki, Hadano, JP;
COORSTEK KK, Tokyo, JP;
Abstract
A nitride semiconductor substrate is provided which is suitable for a high withstand voltage power device and prevents a warp and a crack from generating in a Si substrate when forming a thick nitride semiconductor layer on the substrate. A nitride semiconductor substrateis prepared in such a manner that a buffer layerand a semiconductor active layereach comprising a group 13 nitride are stacked one by one on one principal plane of a Si single crystal substrate, the one principal plane has an offset angle of 0.1° to 1° or −1° to −0.1° with respect to a (111) plane, an average dopant concentration in a bulk is 1×10to 1×10cm, the Si single crystal substratehas a SiOfilm on the back, and the total thickness of the buffer layerand the semiconductor active layeris 4 to 10 μm.