The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 03, 2017

Filed:

Oct. 29, 2015
Applicant:

Seiko Epson Corporation, Tokyo, JP;

Inventor:

Yukimune Watanabe, Hokuto, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/16 (2006.01); H01L 29/04 (2006.01); H01L 21/02 (2006.01); H01L 29/739 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1608 (2013.01); H01L 21/0262 (2013.01); H01L 21/02381 (2013.01); H01L 21/02447 (2013.01); H01L 21/02529 (2013.01); H01L 21/02639 (2013.01); H01L 21/02647 (2013.01); H01L 29/04 (2013.01); H01L 29/045 (2013.01); H01L 29/7393 (2013.01);
Abstract

A substrate with a silicon carbide film includes a silicon substrate, a SiC film, and a mask. The SiC film has a filmincluding openingson the silicon substrate and a filmprovided on the upper side of the film. The maskhas a maskprovided on the upper side of the silicon substrate and including openingsand a maskcovering at least part of the masklocated in the openingsand the side surfaces of the openingsand including openings. The width Wof the opening, the thickness T(μm) of the mask, and the thickness D (μm) of the filmat a position corresponding to the openingsatisfy the following relationships: T<tan(54.6°)×W, and D≧tan(54.6°)×W


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