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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9536950 B1

PDFFull Text
Date of Patent:
Jan. 03, 2017

Filed:

Jan. 27, 2015

Semiconductor device and method of fabricating the same

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Jae-Hwan Lee, Seoul, KR;

Sangsu Kim, Yongin-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, KR;

Attorney:

Muir Patent Law, PLLC

Primary Examiner:

Thinh T Nguyen

Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 29/10 (2006.01); H01L 29/423 (2006.01); H01L 29/49 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 21/8238 (2006.01); H01L 27/092 (2006.01); H01L 29/165 (2006.01); H01L 29/06 (2006.01); H01L 21/84 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1033 (2013.01); H01L 21/823807 (2013.01); H01L 21/823821 (2013.01); H01L 27/0924 (2013.01); H01L 29/165 (2013.01); H01L 29/42356 (2013.01); H01L 29/49 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); H01L 21/823842 (2013.01); H01L 21/84 (2013.01); H01L 27/1203 (2013.01); H01L 29/0665 (2013.01); H01L 29/7841 (2013.01);
Abstract

A semiconductor device may include a strain relaxed buffer layer provided on a substrate to contain silicon germanium, a semiconductor pattern provided on the strain relaxed buffer layer to include a source region, a drain region, and a channel region connecting the source region with the drain region, and a gate electrode enclosing the channel region and extending between the substrate and the channel region. The source and drain regions may contain germanium at a concentration of 30 at % or higher.

Find Patent Forward Citations

Lee, Jae-Hwan. (2017). Semiconductor device and method of fabricating the same (U.S. Patent No. 9536950). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9536950

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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