The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 03, 2017
Filed:
Dec. 03, 2015
Panasonic Intellectual Property Management Co., Ltd., Osaka, JP;
Asamira Suzuki, Osaka, JP;
Songbaek Choe, Osaka, JP;
Abstract
A nitride semiconductor device according to one embodiment of the present disclosure includes: a substrate; a first nitride semiconductor layer supported by the substrate; a second nitride semiconductor layer disposed on the first nitride semiconductor layer; a source-side nitride semiconductor regrowth layer which is located on a source-side recess region; a drain-side nitride semiconductor regrowth layer which is located on a drain-side recess region located apart from the source-side recess region; a first diffusion layer which is disposed in the first nitride semiconductor layer and contains Ge diffused from the source-side nitride semiconductor regrowth layer; and a second diffusion layer which is disposed in the first nitride semiconductor layer and contains Ge diffused from the drain-side nitride semiconductor regrowth layer.