The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 03, 2017

Filed:

Aug. 24, 2015
Applicant:

Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;

Inventors:

Jae-Ho Park, Suwon-Si, KR;

Taejoong Song, Seongnam-Si, KR;

Sanghoon Baek, Seoul, KR;

Jintae Kim, Suwon-Si, KR;

Giyoung Yang, Seoul, KR;

Hyosig Won, Suwon-Si, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/088 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/417 (2006.01); H01L 27/02 (2006.01); H01L 27/092 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0642 (2013.01); H01L 27/0207 (2013.01); H01L 27/092 (2013.01); H01L 27/0924 (2013.01); H01L 29/0847 (2013.01); H01L 29/41758 (2013.01); H01L 29/41791 (2013.01); H01L 21/823871 (2013.01);
Abstract

A semiconductor device includes a substrate having an active region, a gate structure intersecting the active region and extending in a first direction parallel to a top surface of the substrate, a first source/drain region and a second source/drain region disposed in the active region at both sides of the gate structure, respectively, and a first modified contact and a second modified contact in contact with the first source/drain region and the second source/drain region, respectively. The distance between the gate structure and the first modified contact is smaller than the distance between the gate structure and the second modified contact.


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