The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 03, 2017

Filed:

Nov. 26, 2013
Applicant:

Denso Corporation, Kariya, Aichi-pref., JP;

Inventors:

Yuma Kagata, Kariya, JP;

Nozomu Akagai, Nukata-gun, JP;

Keita Hayashi, Nukata-gun, JP;

Assignee:

DENSO CORPORATION, Kariya, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/265 (2006.01); H01L 29/06 (2006.01); H01L 29/861 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/10 (2006.01); H01L 21/225 (2006.01); H01L 21/324 (2006.01); H01L 29/417 (2006.01); H01L 21/38 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0634 (2013.01); H01L 21/2251 (2013.01); H01L 21/26513 (2013.01); H01L 21/324 (2013.01); H01L 29/0615 (2013.01); H01L 29/0619 (2013.01); H01L 29/0696 (2013.01); H01L 29/1095 (2013.01); H01L 29/417 (2013.01); H01L 29/41741 (2013.01); H01L 29/66734 (2013.01); H01L 29/7811 (2013.01); H01L 29/7813 (2013.01); H01L 29/861 (2013.01); H01L 29/8611 (2013.01);
Abstract

A semiconductor device has a deep layer with a higher impurity concentration than that of a super junction structure. The deep layer is formed from a position deeper from a surface of a semiconductor layer by a predetermined depth, and comes in contact with a high impurity layer and also comes in contact with the super junction structure. The deep layer overlaps with a portion between a first end which is an outermost peripheral side of a portion that comes in contact with the high impurity layer in a front surface electrode and an end on an outer peripheral side in the high impurity layer when viewed from a substrate normal direction.


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