The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 03, 2017
Filed:
Sep. 16, 2013
Renesas Electronics Corporation, Kanagawa, JP;
Tomohiro Tamaki, Kanagawa, JP;
RENESAS ELECTRONICS CORPORATION, Kanagawa, JP;
Abstract
Vertical power MOSFETs having a super junction are devices capable of having a lower on resistance than other vertical power MOSFETs. Although they have the advantage of high-speed switching due to rapid depletion of an N type drift region at the time of turn off in switching operation, they are likely to cause ringing. A vertical power MOSFET having a super junction structure provided by the present invention has, in the surface region of a first conductivity type drift region under a gate electrode, an undergate heavily doped N type region having a depth shallower than that of a second conductivity type body region and having a concentration higher than that of the first conductivity type drift region.