The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 03, 2017

Filed:

Mar. 27, 2015
Applicant:

Altera Corporation, San Jose, CA (US);

Inventors:

Douglas Dean Lopata, Boyertown, NJ (US);

Jeffrey Demski, Orefield, PA (US);

Jay Norton, Wind Gap, PA (US);

Miguel Rojas-Gonzales, Bedminster, NJ (US);

Assignee:

Altera Corporation, San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/06 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 28/20 (2013.01); H01L 27/0629 (2013.01);
Abstract

A semiconductor device including a resistor metallic layer and method forming the same. In one embodiment, the semiconductor device includes a source region and a drain region of a semiconductor switch on a substrate. The semiconductor device also includes the resistor metallic layer over the source region and the drain region of the semiconductor switch. The resistor metallic layer includes a first resistor with a first resistor metallic strip coupled between a first cross member and a second cross member of the resistor metallic layer.


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