The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 03, 2017
Filed:
Oct. 13, 2015
Fuji Electric Co., Ltd., Kawasaki-shi, JP;
FUJI ELECTRIC CO., LTD., Kawasaki-Shi, JP;
Abstract
An IGBT is disposed in an IGBT portion, and an FWD is disposed in an FWD portion. A p-type base region and an n-type drift region are alternately exposed in a trench longitudinal direction in a substrate front surface in a mesa portion between neighboring trenches in the IGBT portion. A p-type anode region and the n-type drift region are alternately exposed in the trench longitudinal direction in the substrate front surface in a mesa portion in the FWD portion, and a repetitive structure is formed with a portion of the n-type drift region sandwiched between p-type anode regions and one p-type anode region in contact with the portion as one unit region. The proportion occupied by the p-type anode region in one unit region (an anode ratio) (α) is 50% to 100%.