The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 03, 2017
Filed:
Mar. 27, 2014
Applicant:
Mitsubishi Electric Corporation, Chiyoda-ku, JP;
Inventors:
Koji Yamazaki, Chiyoda-ku, JP;
Takeshi Araki, Chiyoda-ku, JP;
Assignee:
Mitsubishi Electric Corporation, Chiyoda-ku, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); B23K 20/00 (2006.01); B23K 35/30 (2006.01); C22C 5/06 (2006.01); H01L 23/495 (2006.01); H01L 23/49 (2006.01);
U.S. Cl.
CPC ...
H01L 24/49 (2013.01); B23K 20/004 (2013.01); B23K 35/3006 (2013.01); C22C 5/06 (2013.01); H01L 24/32 (2013.01); H01L 24/43 (2013.01); H01L 24/83 (2013.01); H01L 24/85 (2013.01); H01L 23/49 (2013.01); H01L 23/49513 (2013.01); H01L 24/29 (2013.01); H01L 24/45 (2013.01); H01L 2224/04026 (2013.01); H01L 2224/05568 (2013.01); H01L 2224/05639 (2013.01); H01L 2224/26175 (2013.01); H01L 2224/29111 (2013.01); H01L 2224/325 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/32507 (2013.01); H01L 2224/4501 (2013.01); H01L 2224/45139 (2013.01); H01L 2224/45144 (2013.01); H01L 2224/45147 (2013.01); H01L 2224/48225 (2013.01); H01L 2224/48499 (2013.01); H01L 2224/48507 (2013.01); H01L 2224/49173 (2013.01); H01L 2224/8309 (2013.01); H01L 2224/83011 (2013.01); H01L 2224/83014 (2013.01); H01L 2224/8314 (2013.01); H01L 2224/83191 (2013.01); H01L 2224/83203 (2013.01); H01L 2224/83385 (2013.01); H01L 2224/83439 (2013.01); H01L 2224/85801 (2013.01); H01L 2924/0103 (2013.01); H01L 2924/014 (2013.01); H01L 2924/0105 (2013.01); H01L 2924/01013 (2013.01); H01L 2924/01014 (2013.01); H01L 2924/01015 (2013.01); H01L 2924/01022 (2013.01); H01L 2924/01026 (2013.01); H01L 2924/01027 (2013.01); H01L 2924/01028 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/01031 (2013.01); H01L 2924/01032 (2013.01); H01L 2924/01046 (2013.01); H01L 2924/01047 (2013.01); H01L 2924/01049 (2013.01); H01L 2924/01051 (2013.01); H01L 2924/01078 (2013.01); H01L 2924/01079 (2013.01); H01L 2924/01083 (2013.01); H01L 2924/01322 (2013.01); H01L 2924/1033 (2013.01); H01L 2924/10254 (2013.01); H01L 2924/10272 (2013.01); H01L 2924/12 (2013.01); H01L 2924/1305 (2013.01); H01L 2924/13055 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/19107 (2013.01); H01L 2924/2064 (2013.01); H01L 2924/20641 (2013.01); H01L 2924/20751 (2013.01); H01L 2924/20752 (2013.01); H01L 2924/20753 (2013.01); H01L 2924/20754 (2013.01); H01L 2924/20755 (2013.01); H01L 2924/351 (2013.01);
Abstract
A semiconductor device includes, an alloy layer sandwiched between a first Ag layer formed on a mounting board or circuit board and a second Ag layer formed on a semiconductor element, wherein the alloy layer contains an intermetallic compound of AgSn formed by Ag components of the first Ag layer and the second Ag layer and Sn, and wherein a plurality of wires containing Ag are arranged extended from an outside-facing periphery of the alloy layer.