The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 03, 2017
Filed:
Aug. 21, 2014
Applicant:
Denso Corporation, Kariya, Aichi-pref., JP;
Inventor:
Tomohito Iwashige, Kariya, JP;
Assignee:
DENSO CORPORATION, Kariya, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/495 (2006.01); H01L 23/31 (2006.01); H01L 23/29 (2006.01); H01L 29/16 (2006.01); H01L 29/739 (2006.01); H01L 29/78 (2006.01); H01L 29/872 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/3142 (2013.01); H01L 23/29 (2013.01); H01L 23/293 (2013.01); H01L 23/31 (2013.01); H01L 23/49562 (2013.01); H01L 23/49568 (2013.01); H01L 24/33 (2013.01); H01L 29/1608 (2013.01); H01L 29/7395 (2013.01); H01L 29/7802 (2013.01); H01L 29/872 (2013.01); H01L 24/73 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48247 (2013.01); H01L 2224/73265 (2013.01); H01L 2224/8592 (2013.01); H01L 2924/12032 (2013.01); H01L 2924/13055 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/181 (2013.01);
Abstract
A semiconductor device includes a semiconductor chip, a resin mold portion sealing a component in which the semiconductor chip is included, and a bonding layer disposed between the resin mold portion and the component. The bonding layer is made of an organic resin that is disposed at an obverse side of the component, and includes a first layer bonded to the component and a second layer bonded to the resin mold portion. A loss coefficient tan δ of the first layer is smaller than a loss coefficient tan δ of the second layer within a temperature range of 200° C. to 250° C.