The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 03, 2017
Filed:
Aug. 20, 2014
Applicant:
Stmicroelectronics (Tours) Sas, Tours, FR;
Inventor:
Arnaud Yvon, Sainy-Cyr sur Loire, FR;
Assignee:
STMICROELECTRONICS (TOURS) SAS, Tours, FR;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/306 (2006.01); H01L 21/02 (2006.01); H01L 21/322 (2006.01); H01L 29/20 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/30625 (2013.01); H01L 21/02002 (2013.01); H01L 21/0254 (2013.01); H01L 21/02381 (2013.01); H01L 21/02458 (2013.01); H01L 21/02494 (2013.01); H01L 21/02664 (2013.01); H01L 21/30612 (2013.01); H01L 21/30621 (2013.01); H01L 21/3228 (2013.01); H01L 29/2003 (2013.01); H01L 29/66212 (2013.01);
Abstract
A method is for treating a doped gallium nitride substrate of a first conductivity type, having dislocations emerging on the side of at least one of its surfaces. The method may include: a) forming, where each dislocation emerges, a recess extending into the substrate from the at least one surface; and b) filling the recesses with doped gallium nitride of the second conductivity type.