The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 03, 2017
Filed:
Mar. 25, 2016
Kabushiki Kaisha Toshiba, Minato-ku, Tokyo, JP;
Ryousuke Takizawa, Naka Kanagawa, JP;
KABUSHIKI KAISHA TOSHIBA, Tokyo, JP;
Abstract
A nonvolatile memory includes a memory area including plural first magnetoresistive elements each serving as a memory element, each first magnetoresistive element including a first storage layer and a first reference layer, with a first insulating film therebetween. A fuse circuit storing correction information of the memory area when a defect exists in the memory area, includes plural second magnetoresistive elements and plural fuse elements, the second magnetoresistive elements each serving as an anti-fuse element. Each second magnetoresistive element includes a second storage layer and a second reference layer, with a second insulating film therebetween. The fuse elements each store at least part of the correction information. A redundancy area includes plural third magnetoresistive elements each serving as a redundancy element, each third magnetoresistive element including a third storage layer and a third reference layer, with a third insulating film therebetween. When an external address signal matches the correction information, one third magnetoresistive element is selected.