The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 03, 2017

Filed:

Oct. 30, 2015
Applicant:

Sandisk Technologies Inc., Plano, TX (US);

Inventors:

Ali Al-Shamma, San Jose, CA (US);

Farookh Moogat, Fremont, CA (US);

Chang Siau, Saratoga, CA (US);

Grishma Shah, San Jose, CA (US);

Kenneth Louie, Milpitas, CA (US);

Khanh Nguyen, Milpitas, CA (US);

Kapil Verma, Milpitas, CA (US);

Assignee:

SANDISK TECHNOLOGIES LLC, Plano, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/06 (2006.01); G11C 16/30 (2006.01); G11C 16/24 (2006.01);
U.S. Cl.
CPC ...
G11C 16/30 (2013.01); G11C 16/24 (2013.01);
Abstract

Systems and methods for reducing peak power supply current in a non-volatile memory system that includes a plurality of memory die are described. In some cases, prior to a first memory die of the plurality of memory die performing a particular memory operation (e.g., a programming operation), the first memory die may poll other memory die of the plurality of memory die to determine a total peak power supply current for the plurality of memory die. In response to detecting that the total peak power supply current for the plurality of memory die is at or above a peak current threshold (e.g., more than 200 mA), the first memory die may delay the performance of the particular memory operation or slow down the performance of the particular memory operation.


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