The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 03, 2017
Filed:
Oct. 15, 2014
Samsung Electronics Co., Ltd., Suwon-si, KR;
Young-Soo Sohn, Seoul, KR;
Chul-Woo Park, Yongin-si, KR;
Si-Hong Kim, Yongin-si, KR;
Kwang-Il Park, Yongin-si, KR;
Jae-Youn Youn, Seoul, KR;
SAMSUNG ELECTRONICS CO., LTD., Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, KR;
Abstract
A memory device includes a memory cell array, an intensively accessed row detection circuit, and a refresh control circuit. The memory cell array includes a plurality of memory cell rows. The intensively accessed row detection circuit generates an intensively accessed row address indicating an intensively accessed memory cell row among the plurality of memory cell rows based on an accumulated access time for each of the plurality of memory cell rows. The refresh control unit preferentially refreshes neighboring memory cell rows adjacent to the intensively accessed memory cell row indicated by the intensively accessed row address when receiving the intensively accessed row address from the intensively accessed row detection unit. The memory device effectively reduces a rate of data loss.