The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 03, 2017

Filed:

Nov. 23, 2015
Applicant:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Inventors:

Tomoaki Inokuchi, Yokohama, JP;

Mizue Ishikawa, Yokohama, JP;

Hideyuki Sugiyama, Kawasaki, JP;

Tetsufumi Tanamoto, Kawasaki, JP;

Akira Takashima, Tokyo, JP;

Yoshiaki Saito, Kawasaki, JP;

Assignee:

KABUSHIKI KAISHA TOSHIBA, Minato-ku, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/16 (2006.01); G11C 5/12 (2006.01); H01L 29/82 (2006.01); H01L 29/66 (2006.01); H01L 43/08 (2006.01); G11C 11/56 (2006.01); G11C 19/08 (2006.01); G11C 13/00 (2006.01); H01L 27/22 (2006.01);
U.S. Cl.
CPC ...
G11C 11/161 (2013.01); G11C 11/16 (2013.01); G11C 11/1673 (2013.01); G11C 11/1675 (2013.01); G11C 11/5607 (2013.01); G11C 19/0808 (2013.01); H01L 27/224 (2013.01); H01L 29/66984 (2013.01); H01L 29/82 (2013.01); H01L 43/08 (2013.01); G11C 13/0069 (2013.01); H01L 27/222 (2013.01);
Abstract

A magnetic memory according to an embodiment includes: a multilayer structure including a semiconductor layer and a first ferromagnetic layer; a first wiring line electrically connected to the semiconductor layer; a second wiring line electrically connected to the first ferromagnetic layer; and a voltage applying unit electrically connected between the first wiring line and the second wiring line to apply a first voltage between the semiconductor layer and the first ferromagnetic layer during a write operation, a magnetization direction of the first ferromagnetic layer being switchable by applying the first voltage.


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