The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 03, 2017
Filed:
Jul. 30, 2013
Applicant:
Shin-estu Chemical Co., Ltd., Tokyo, JP;
Inventor:
Hitoshi Noguchi, Annaka, JP;
Assignee:
SHIN-ETSU CHEMICAL CO., LTD., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C30B 25/16 (2006.01); C23C 16/517 (2006.01); C23C 16/27 (2006.01); C23C 16/515 (2006.01); C30B 25/10 (2006.01); C30B 25/18 (2006.01); C30B 29/04 (2006.01);
U.S. Cl.
CPC ...
C30B 25/16 (2013.01); C23C 16/272 (2013.01); C23C 16/515 (2013.01); C23C 16/517 (2013.01); C30B 25/105 (2013.01); C30B 25/183 (2013.01); C30B 29/04 (2013.01);
Abstract
Diamond is grown on a substrate (S) from a mixture of a carbon-containing gas and hydrogen gas, by a DC plasma enhanced CVD process of applying a DC voltage between a stage electrode () for holding the substrate (S) and a voltage-applying electrode (). During the step of growing diamond by applying a DC voltage, a single pulse voltage of opposite polarity to the DC voltage for diamond growth is applied between the stage electrode and the voltage-applying electrode at a predetermined timing. Diamond of quality is produced at a stable growth rate.