The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 27, 2016

Filed:

Feb. 05, 2016
Applicant:

Fujitsu Limited, Kawasaki-shi, Kanagawa, JP;

Inventor:

Satoshi Masuda, Atsugi, JP;

Assignee:

FUJITSU LIMITED, Kawasaki, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/66 (2006.01); H05K 7/02 (2006.01); H01L 25/16 (2006.01); H01L 23/045 (2006.01); H01L 23/047 (2006.01); H01L 23/498 (2006.01); H05K 3/46 (2006.01); H05K 7/20 (2006.01); H01L 23/00 (2006.01); H01L 23/367 (2006.01); H05K 1/02 (2006.01); H05K 9/00 (2006.01);
U.S. Cl.
CPC ...
H05K 7/026 (2013.01); H01L 23/045 (2013.01); H01L 23/047 (2013.01); H01L 23/49833 (2013.01); H01L 23/66 (2013.01); H01L 25/162 (2013.01); H05K 1/0215 (2013.01); H05K 3/4697 (2013.01); H05K 7/20509 (2013.01); H01L 23/3677 (2013.01); H01L 24/48 (2013.01); H01L 24/49 (2013.01); H01L 2224/06181 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48227 (2013.01); H01L 2224/4911 (2013.01); H01L 2924/00014 (2013.01); H01L 2924/1627 (2013.01); H01L 2924/16195 (2013.01); H01L 2924/19107 (2013.01); H05K 1/021 (2013.01); H05K 1/0204 (2013.01); H05K 9/0039 (2013.01); H05K 2201/0919 (2013.01); H05K 2201/09845 (2013.01); H05K 2201/1056 (2013.01); H05K 2201/10242 (2013.01); H05K 2201/10371 (2013.01);
Abstract

A high-frequency module includes a lower base member having a recess part formed in an upper face thereof, and having a base metal part formed on a lower face thereof that is to be grounded, an upper substrate disposed inside the recess part of the lower base member. The high frequency module also includes a semiconductor device and a first ground metal part connected to the base metal part and disposed in the lower base member. The upper substrate has a first through hole formed therethrough at a position where the first ground metal part is situated, and the semiconductor device is placed on the first ground metal part in the first through hole.


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