The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 27, 2016

Filed:

Sep. 10, 2014
Applicant:

Kabushiki Kaisha Toshiba, Minato-ku, Tokyo, JP;

Inventors:

Jun Deguchi, Cambridge, MA (US);

Daisuke Miyashita, Kawasaki Kanagawa, JP;

Makoto Morimoto, Yokohama Kanagawa, JP;

Fumihiko Tachibana, Yokohama Kanagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04N 5/369 (2011.01); H03F 3/08 (2006.01); H04N 5/235 (2006.01); H04N 5/378 (2011.01); H04N 5/243 (2006.01);
U.S. Cl.
CPC ...
H04N 5/378 (2013.01); H03F 3/087 (2013.01); H04N 5/243 (2013.01); H03F 2203/45514 (2013.01);
Abstract

According to an embodiment, a semiconductor integrated circuit includes an amplification unit, a comparison unit and a control unit. The amplification unit is configured to amplify a pixel value with an amplification factor that is set in a variable manner, the pixel value being according to an intensity of light irradiated on a pixel. The comparison unit is configured to compare an output value given by the amplification unit and a reference value. The control unit is configured to cause the amplification factor to be higher than a present amplification factor, only when the output value given by the amplification unit is not saturated even where the amplification factor is caused to be higher than the present amplification factor, based on the comparison result of the comparison unit.


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