The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 27, 2016

Filed:

Nov. 24, 2015
Applicant:

Osram Opto Semiconductors Gmbh, Regensburg, DE;

Inventors:

Alfred Lell, Maxhuette-Haidhof, DE;

Christoph Eichler, Tegernheim, DE;

Wolfgang Schmid, Regensburg, DE;

Soenke Tautz, Tegernheim, DE;

Wolfgang Reill, Pentling, DE;

Dimitri Dini, Soest, DE;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/00 (2006.01); H01S 5/10 (2006.01); H01S 5/028 (2006.01); H01S 5/22 (2006.01);
U.S. Cl.
CPC ...
H01S 5/1082 (2013.01); H01S 5/0078 (2013.01); H01S 5/028 (2013.01); H01S 5/0282 (2013.01); H01S 5/1017 (2013.01); H01S 5/1092 (2013.01); H01S 5/22 (2013.01); H01S 5/0286 (2013.01); H01S 5/105 (2013.01); H01S 5/1078 (2013.01); H01S 2301/02 (2013.01); H01S 2301/166 (2013.01);
Abstract

A laser light source, comprising a semiconductor layer sequence on a substrate and having an active region and a radiation coupling out area having first and second partial regions and a filter structure. The active region generates coherent first electromagnetic radiation and incoherent second electromagnetic radiation, the coherent first electromagnetic radiation is emitted by the first partial region along an emission direction, the incoherent second electromagnetic radiation is emitted by the first partial region and by the second partial region. The filter structure at least partly attenuates the incoherent second electromagnetic radiation emitted by the active region along the emission direction. The filter structure has at least one filter element arranged on an area of the semiconductor layer sequence which has an extension direction parallel to the emission direction and which is remote from the substrate.


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