The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 27, 2016

Filed:

Sep. 11, 2013
Applicant:

Fujitsu Limited, Kawasaki-shi, Kanagawa, JP;

Inventor:

Andrey S Andrenko, Kawasaki, JP;

Assignee:

FUJITSU LIMITED, Kawasaki, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01Q 1/27 (2006.01); H01Q 1/40 (2006.01); H01Q 9/04 (2006.01);
U.S. Cl.
CPC ...
H01Q 1/273 (2013.01); H01Q 1/40 (2013.01); H01Q 9/0421 (2013.01);
Abstract

The planar inverted-F antenna includes a first substrate made of a dielectric material, a grounding electrode disposed on a first surface of the first substrate; an emitting electrode disposed to be opposite to the grounding electrode so as to sandwich the first substrate, wherein the emitting electrode has an S-shape, and has a short-circuiting point short-circuited to the grounding electrode at an edge portion thereof, and a feed point at which power is fed and which is located away from the short-circuiting point by a distance at which the characteristic impedance of the planar inverted-F antenna for electric waves with a certain design wavelength has a certain value; and a second substrate disposed to cover the entire emitting electrode together with the first substrate and made of a dielectric material.


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