The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 27, 2016

Filed:

Jun. 02, 2016
Applicant:

Seoul Viosys Co., Ltd., Ansan-si, KR;

Inventors:

Jong Hyeon Chae, Ansan-si, KR;

Jong Min Jang, Ansan-si, KR;

Won Young Roh, Ansan-si, KR;

Dae Woong Suh, Ansan-si, KR;

Min Woo Kang, Ansan-si, KR;

Joon Sub Lee, Ansan-si, KR;

Hyun A Kim, Ansan-si, KR;

Assignee:

Seoul Viosys Co., Ltd., Ansan-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/40 (2010.01); H01L 33/46 (2010.01); H01L 33/00 (2010.01); H01L 33/48 (2010.01); H01L 33/60 (2010.01); H01L 33/62 (2010.01); H01L 33/12 (2010.01); H01L 33/06 (2010.01); H01L 33/32 (2010.01); H01L 33/38 (2010.01); H01L 33/44 (2010.01);
U.S. Cl.
CPC ...
H01L 33/405 (2013.01); H01L 33/005 (2013.01); H01L 33/007 (2013.01); H01L 33/06 (2013.01); H01L 33/12 (2013.01); H01L 33/32 (2013.01); H01L 33/40 (2013.01); H01L 33/46 (2013.01); H01L 33/486 (2013.01); H01L 33/60 (2013.01); H01L 33/62 (2013.01); H01L 33/382 (2013.01); H01L 33/44 (2013.01); H01L 2933/0016 (2013.01); H01L 2933/0025 (2013.01); H01L 2933/0058 (2013.01); H01L 2933/0066 (2013.01);
Abstract

A light emitting diode (LED) includes a substrate, a first semiconductor layer disposed on the substrate, an active layer disposed on a portion of the first semiconductor layer, a second semiconductor layer disposed on the active layer, a reflection pattern disposed on a portion of the second semiconductor layer, and a first insulating layer including a first portion having a first thickness and a second portion having a second thickness different from the first thickness, in which the first portion is disposed on the reflection pattern or the first semiconductor layer and the second portion is disposed on the second semiconductor layer.


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