The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 27, 2016

Filed:

Dec. 04, 2013
Applicants:

Lg Electronics Inc., Seoul, KR;

Lg Innotek Co., Ltd., Seoul, KR;

Inventors:

Jun Ho Jang, Anyang-si, KR;

Jae Wan Choi, Seoul, KR;

Duk Kyu Bae, Seoul, KR;

Hyun Kyong Cho, Seoul, KR;

Jong Kook Park, Centreville, VA (US);

Sun Jung Kim, Suwon-si, KR;

Jeong Soo Lee, Seongnam-si, KR;

Assignees:

LG Electronics Inc., Seoul, KR;

LG Innotek Co., Ltd., Seoul, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/20 (2010.01); H01L 33/62 (2010.01); H01L 33/40 (2010.01); H01L 33/00 (2010.01); H01L 33/04 (2010.01); H01L 33/22 (2010.01);
U.S. Cl.
CPC ...
H01L 33/405 (2013.01); H01L 33/0079 (2013.01); H01L 33/04 (2013.01); H01L 33/40 (2013.01); H01L 33/20 (2013.01); H01L 33/22 (2013.01); H01L 2933/0016 (2013.01); H01L 2933/0083 (2013.01);
Abstract

An LED having vertical topology and a method of making the same is capable of improving a luminous efficiency and reliability, and is also capable of achieving mass productivity. The method includes forming a semiconductor layer on a substrate; forming a first electrode on the semiconductor layer; forming a supporting layer on the first electrode; generating an acoustic stress wave at the interface between the substrate and semiconductor layer, thereby separating the substrate from the semiconductor layer; and forming a second electrode on the semiconductor layer exposed by the separation of the substrate.


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