The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 27, 2016

Filed:

Sep. 23, 2013
Applicant:

Sanyo Electric Co., Ltd., Moriguchi, Osaka, JP;

Inventors:

Isao Hasegawa, Akashi, JP;

Toshio Asaumi, Kishiwada, JP;

Hitoshi Sakata, Higashi-Osaka, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0352 (2006.01); H01L 31/0224 (2006.01); H01L 31/068 (2012.01); H01L 31/0747 (2012.01);
U.S. Cl.
CPC ...
H01L 31/035281 (2013.01); H01L 31/022441 (2013.01); H01L 31/0682 (2013.01); H01L 31/0747 (2013.01); Y02E 10/547 (2013.01);
Abstract

Provided is a solar cell having improved photoelectric conversion efficiency. The solar cell () contains: a substrate () comprising a semiconductor material having one type of conductivity; a first semiconductor layer () having the one type of conductivity; and a second semiconductor layer () having the one type of conductivity. The first semiconductor layer () is arranged on one main surface of the substrate (). The second semiconductor layer () is arranged on the other main surface of the substrate (). The solar cell () is configured such that the strength of the electric field formed by the second semiconductor layer () is greater than the strength of the electric field formed by the first semiconductor layer ().


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