The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 27, 2016
Filed:
Mar. 16, 2015
Japan Display Inc., Minato-ku, JP;
Norihiro Uemura, Tokyo, JP;
Isao Suzumura, Tokyo, JP;
Hidekazu Miyake, Tokyo, JP;
Yohei Yamaguchi, Tokyo, JP;
Japan Display Inc., Minato-ku, JP;
Abstract
Provided are a reliable high performance thin film transistor and a reliable high performance display device. The display device has: a gate electrode which is formed on a substrate; a gate insulating film which is formed to cover the substrate and the gate electrode; an oxide semiconductor layer which is formed on the gate electrode through the gate insulating film; a channel protective layer which is in contact with the oxide semiconductor layer and formed on the oxide semiconductor layer; and source/drain electrodes which are electrically connected to the oxide semiconductor layer and formed to cover the oxide semiconductor layer. A metal oxide layer is formed on an upper part of the channel protective layer. The source/drain electrodes are formed to be divided apart on the channel protective layer and the metal oxide layer.