The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 27, 2016
Filed:
Jul. 22, 2015
Samsung Electronics Co., Ltd., Suwon-si, KR;
Jieon Yoon, Hwaseong-si, KR;
Seokhoon Kim, Suwon-si, KR;
Gyeom Kim, Hwaseong-si, KR;
Nam-Kyu Kim, Yongin-si, KR;
JinBum Kim, Seoul, KR;
Dong Chan Suh, Yongin-si, KR;
Kwan Heum Lee, Suwon-si, KR;
Byeongchan Lee, Yongin-si, KR;
Choeun Lee, Pocheon-si, KR;
Sujin Jung, Hwaseong-si, KR;
Abstract
Provided is a method of fabricating a semiconductor device. The method includes forming a gate pattern on a semiconductor substrate, injecting amorphization elements into the semiconductor substrate to form an amorphous portion at a side of the gate pattern, removing the amorphous portion to form a recess region, and forming a source/drain pattern in the recess region. When the recess region is formed, an etch rate of the amorphous portion is substantially the same in two different directions (e.g., <111> and any other direction) of the semiconductor substrate.