The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 27, 2016

Filed:

Apr. 13, 2016
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

John H. Zhang, Altamont, NY (US);

Carl Radens, LaGrangeville, NY (US);

Steven J. Bentley, Menards, NY (US);

Brian A. Cohen, Delmar, NY (US);

Kwan-Yong Lim, Niskayuna, NY (US);

Assignee:

GLOBALFOUNDRIES Inc., Grand Cayman, KY;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/306 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66545 (2013.01); H01L 21/30604 (2013.01); H01L 29/66553 (2013.01); H01L 29/66666 (2013.01);
Abstract

One illustrative method disclosed herein includes, among other things, forming a vertically oriented channel semiconductor structure, forming a layer of a bottom spacer material around the vertically oriented channel semiconductor structure and forming a sacrificial material layer above the layer of a bottom spacer material. In this example, the method further includes forming a sidewall spacer adjacent the vertically oriented channel semiconductor structure and above an upper surface of the sacrificial material layer, removing the sacrificial material layer so as to define a replacement gate cavity between a bottom surface of the sidewall spacer and the layer of a bottom spacer material, and forming a replacement gate structure in the replacement gate cavity.


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