The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 27, 2016
Filed:
Feb. 20, 2015
Rf Micro Devices, Inc., Greensboro, NC (US);
Haldane S. Henry, Greensboro, NC (US);
Eunki Hong, Oak Ridge, NC (US);
Charles S. Whitman, Greensboro, NC (US);
Qorvo US, Inc., Greensboro, NC (US);
Abstract
A semiconductor device with reduced leakage current and a method of making the same is disclosed. The semiconductor device includes a substrate having a device layer, a dielectric layer, and a gate metal opening within the dielectric layer between a source contact and a gate contact. A first metal layer is disposed within the gate metal opening, and a second metal layer is disposed directly onto the second metal layer, wherein the second metal layer is oxidized and has a thickness that ranges from about 4 Angstroms to about 20 Angstroms to limit a leakage current of a total gate periphery to between around 0.1 μA/mm and around 50 μA/mm. A current carrying layer is disposed on the second metal layer. In one embodiment, the first metal layer is nickel (Ni), the second metal layer is palladium (Pd), and the current carrying layer is gold (Au).