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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9530849 B1

PDFFull Text
Date of Patent:
Dec. 27, 2016

Filed:

Jul. 02, 2014

Transistor having dual work function buried gate electrode and method for fabricating the same

Applicant:

SK Hynix Inc., Gyeonggi-do, KR;

Inventors:

Tae-Kyung Oh, Gyeonggi-do, KR;

Su-Ho Kim, Gyeonggi-do, KR;

Jin-Yul Lee, Gyeonggi-do, KR;

Assignee:

SK Hynix Inc., Gyeonggi-do, KR;

Attorney:

I P & T Group LLP

Primary Examiner:

Marc Armand

Assistant Examiner:

Sarah Salerno

Int. Cl.
CPC ...
H01L 29/41 (2006.01); H01L 29/43 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 27/22 (2006.01); H01L 27/24 (2006.01); H01L 29/49 (2006.01); H01L 27/108 (2006.01); H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
H01L 29/4236 (2013.01); H01L 27/10876 (2013.01); H01L 27/10885 (2013.01); H01L 27/228 (2013.01); H01L 27/2436 (2013.01); H01L 29/4983 (2013.01); H01L 29/66666 (2013.01); H01L 29/7827 (2013.01); H01L 45/06 (2013.01); H01L 45/1233 (2013.01); H01L 45/146 (2013.01);
Abstract

A transistor having a source region and a drain region which are separately formed in a substrate, a trench which is defined in the substrate between the source region and the drain region, and a gate electrode which is formed in the trench. The gate electrode includes a first electrode buried over a bottom of the trench; a second electrode formed over the first electrode; and a liner electrode having an interface part which is positioned between the first electrode and the second electrode and a side part, which is positioned on sidewalls of the second electrode and overlaps with the source region and the drain region.

Find Patent Forward Citations

Oh, Tae-Kyung. (2016). Transistor having dual work function buried gate electrode and method for fabricating the same (U.S. Patent No. 9530849). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9530849

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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