The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 27, 2016
Filed:
Jul. 02, 2015
Applicant:
SK Hynix Inc., Icheon-si, Gyeonggi-do, KR;
Inventor:
Moon Sik Seo, Incheon, KR;
Assignee:
SK HYNIX INC., Icheon-Si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/28 (2006.01); H01L 29/423 (2006.01); H01L 27/115 (2006.01); H01L 29/66 (2006.01); H01L 29/792 (2006.01); H01L 29/32 (2006.01); H01L 29/788 (2006.01);
U.S. Cl.
CPC ...
H01L 29/42352 (2013.01); H01L 21/28273 (2013.01); H01L 21/28282 (2013.01); H01L 27/11551 (2013.01); H01L 27/11556 (2013.01); H01L 27/11578 (2013.01); H01L 27/11582 (2013.01); H01L 29/32 (2013.01); H01L 29/42336 (2013.01); H01L 29/66825 (2013.01); H01L 29/66833 (2013.01); H01L 29/7889 (2013.01); H01L 29/7926 (2013.01); H01L 27/1157 (2013.01); H01L 27/11524 (2013.01); H01L 29/788 (2013.01);
Abstract
Provided is a semiconductor device including a pillar, a gate electrode having a first conductive pattern surrounding the pillar and a plurality of second conductive patterns which protrude from the first conductive pattern and are arranged to be spaced apart from each other, and an insulating pattern interposed between the pillar and the first conductive pattern.