The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 27, 2016
Filed:
Aug. 13, 2015
Renesas Electronics Corporation, Koutou-ku, Tokyo, JP;
Yuya Abiko, Tokyo, JP;
Akio Ichimura, Tokyo, JP;
Toshiaki Igarashi, Tokyo, JP;
Yasuhiro Shirai, Tokyo, JP;
Renesas Electronics Corporation, Tokyo, JP;
Abstract
To improve characteristics of a semiconductor device (vertical power MOSFET). A spiral p-type column region having a corner is formed in a peripheral region surrounding a cell region in which a semiconductor element is formed. In an epitaxial layer of the peripheral region surrounding the cell region in which the semiconductor element is formed, a trench spirally surrounding the cell region and having the first and second side faces making up the corner is formed and the trench is filled with the epitaxial layer. By spirally arranging the p-type column region (n-type column region) in such a manner, a drop in a withstand voltage margin due to a hot spot can be avoided. In addition, the continuity of the p-type column region (n-type column region) is maintained. As a result, electric field concentration is alleviated step by step toward the outer periphery and the withstand voltage is therefore increased.