The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 27, 2016

Filed:

Jan. 13, 2014
Applicant:

Apple Inc., Cupertino, CA (US);

Inventors:

Daisuke Nozu, Saitama, JP;

Hirokazu Yamagata, Adachi, JP;

Hiroshi Osawa, Sunnyvale, CA (US);

Shang-Chih Lin, Los Altos, CA (US);

Shih-Chang Chang, Cupertino, CA (US);

Yu-Cheng Chen, San Jose, CA (US);

Assignee:

Apple Inc., Cupertino, CA (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G02F 1/1368 (2006.01); H01L 27/12 (2006.01); G02F 1/1335 (2006.01); G02F 1/1362 (2006.01); G02F 1/1333 (2006.01); G02F 1/136 (2006.01);
U.S. Cl.
CPC ...
H01L 27/124 (2013.01); G02F 1/1368 (2013.01); G02F 1/133502 (2013.01); G02F 1/136213 (2013.01); G02F 1/136227 (2013.01); H01L 27/1255 (2013.01); H01L 27/1259 (2013.01); G02F 1/133345 (2013.01); G02F 2001/13606 (2013.01); G02F 2001/13685 (2013.01); G02F 2201/40 (2013.01); G02F 2202/42 (2013.01);
Abstract

A display may have a color filter layer and a thin-film transistor layer. A layer of liquid crystal material may be located between the color filter layer and the thin-film transistor (TFT) layer. The TFT layer may include thin-film transistors formed on top of a glass substrate. A passivation layer may be formed on the thin-film transistor layers. A first low-k dielectric layer may be formed on the passivation layer. Data line routing structures may be formed on the first low-k dielectric layer. A second low-k dielectric layer may be formed on the first low-k dielectric layer. A common voltage electrode and associated storage capacitance may be formed on the second low-k dielectric layer. The first and second low-k dielectric layers may be formed from material having substantially similar refractive indices to maximize backlight transmittance and may have appropriate thicknesses so as to minimize parasitic capacitive loading.


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