The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 27, 2016
Filed:
Mar. 01, 2015
Kabushiki Kaisha Toshiba, Tokyo, JP;
Yugo Kunishi, Yokohama Kanagawa, JP;
Toshiki Seshita, Kawasaki Kanagawa, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor switch on a SOI substrate that includes a supporting substrate, an insulating layer on the supporting substrate, and a semiconductor layer provided on the insulating layer, includes a first and a second through FET groups, each including a plurality of field effect transistors connected in series between a common node and a first and second node, respectively. The first through FET group has an area equal to or less than an area Sfet, which is calculated by using an equivalent circuit including a resistance that represents leakage of a high frequency signal from the first through FET group to the supporting substrate.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile