The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 27, 2016
Filed:
Feb. 09, 2015
Kabushiki Kaisha Toshiba, Tokyo, JP;
Kazunari Toyonaga, Yokkaichi Mie, JP;
Shoichi Watanabe, Yokkaichi Mie, JP;
Karin Takayama, Yokkaichi Mie, JP;
Shotaro Murata, Kariya Aichi, JP;
Satoshi Nagashima, Yokkaichi Mie, JP;
KABUSHIKI KAISHA TOSHIBA, Tokyo, JP;
Abstract
A nonvolatile semiconductor memory device includes a semiconductor substrate, a memory element including a first gate electrode having a first thickness disposed on a first insulation film on the semiconductor substrate, and a first peripheral element other than a memory element including a second gate electrode having a second thickness disposed on a second insulation film on the semiconductor substrate. The first gate electrode and second gate electrode comprise a plurality of film layers, and the configuration of the film layers are different as between the first gate electrode of the memory element and the second gate electrode of the peripheral element, and the first thickness is different from the second thickness.