The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 27, 2016

Filed:

Apr. 24, 2014
Applicant:

Globalfoundries, Inc., Grand Cayman, KY;

Inventors:

Alexandru Romanescu, Dresden, DE;

Gerd Zschätzsch, Dresden, DE;

Christian Schippel, Dresden, DE;

Assignee:

GLOBALFOUNDRIES, INC., Grand Cayman, KY;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01L 27/06 (2006.01); H01L 49/02 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0629 (2013.01); H01L 28/24 (2013.01); H01L 29/665 (2013.01); H01L 29/78 (2013.01);
Abstract

Integrated circuits having resistor structures formed from gate metal and methods for fabricating such integrated circuits are provided. In an embodiment, a method for fabricating an integrated circuit includes providing a semiconductor substrate with a resistor area and a transistor area. The method deposits a gate metal over the resistor area and the transistor area of the semiconductor substrate, and the gate metal forms a gate metal layer in the resistor area. The method includes etching the gate metal to form a resistor structure from the gate metal layer in the resistor area. Further, the method includes forming contacts to the resistor structure in the resistor area.


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